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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1190 DESCRIPTION *With TO-220 package *High VCEO *Large PC *Complement to type 2SD1772 APPLICATIONS *Power amplifier *TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -1 -2 1.4 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5mA , B=0 IE=-0.5mA ,IC=0 IC=-500mA; IB=-50mA IC=-300mA ; VCE=-10V VCB=-200V; IE=0 VEB=-4V; IC=0 IC=-100mA ; VCE=-10V IC=-300mA ; VCE=-10V IE=0 ; VCB=-10V,f=1MHz IC=-100mA ; VCE=-10V 60 50 MIN -150 -6 2SB1190 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V -1.0 -1.0 -50 -50 240 V V A A 35 20 pF MHz hFE-1 Classifications Q 60-140 P 100-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1190 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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